Analysis of Gas Phase Reaction Pathways for InN Metal Organic Vapor Phase Epitaxy
Author:
Affiliation:
1. Faculty of Engineering, Tokyo Polytechnic University
2. Faculty of Science, University of the Ryukyus
Publisher
Society of Chemical Engineers, Japan
Subject
General Chemical Engineering,General Chemistry
Link
https://www.jstage.jst.go.jp/article/jcej/51/7/51_17we288/_pdf
Reference11 articles.
1. Hirako, A., K. Kusakabe and K. Ohkawa; “Modeling of Reaction Pathways of GaN Growth by Metalorganic Vapor–Phase Epitaxy Using TMGa/NH3/H2 System: A Computational Fluid Dynamics Simulation Study,” Jpn. J. Appl. Phys., 44, 874–879 (2005)
2. Kangawa, Y., T. Akiyama, T. Ito, K. Shiraishi and T. Nakayama; “Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach,” Materials (Basel), 6, 3309–3360 (2013)
3. Liu, Y. H., T. Kimura, T. Shimada, M. Hirata, M. Wakaba, M. Nakao, S. Ji and T. Matsuoka; “MOVPE Growth of InN: A Comparison between a Horizontal and a Vertical Reactor,” Phys. Status Solidi, 6(S2), S381–S384 (2009)
4. Matsuoka, T.; “Nitride Semiconductors for Blue Lasers,” Proc. SPIE, 6050, 60500K1–60500K9, Sapporo, Japan (2006)
5. Parikh, R. P. and R. A. Adomaitis; “An Overview of Gallium Nitride Growth Chemistry and Its Effect on Reactor Design: Application to a Planetary Radial-Flow CVD System,” J. Cryst. Growth, 286, 259–278 (2006)
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