Interaction of electrons with acoustic phonons in AlN/GaN resonant tunnelling nanostructures at different temperatures
Author:
Publisher
Institute for Condensed Matter Physics
Subject
Physics and Astronomy (miscellaneous),Condensed Matter Physics
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Mathematical Model of Tunneling Transport in Nanosystems with the Influence of Optical Phonons;2023 13th International Conference on Advanced Computer Information Technologies (ACIT);2023-09-21
2. Tunneling transport in open nitride resonant tunneling structures taking into account the acoustic phonons: An variational approach;Physica B: Condensed Matter;2022-07
3. Density Functional Theory Studies of Sulfur Compounds Removal by Zinc Oxide Nanotube;INT J NANOELECTRON M;2022
4. Investigation of the electron-acoustic phonon interaction via the deformation and piezoelectric potentials in AlN/GaN resonant tunneling nanostructures;Superlattices and Microstructures;2021-08
5. Theory of the shear acoustic phonons spectrum and their interaction with electrons due to the piezoelectric potential in AlN/GaN nanostructures of plane symmetry;Low Temperature Physics;2021-02
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