Analytical Drain-Current Model and Surface-Potential Calculation for Junctionless Cylindrical Surrounding-Gate MOSFETs-Reference-Cited by-同舟云学术

Analytical Drain-Current Model and Surface-Potential Calculation for Junctionless Cylindrical Surrounding-Gate MOSFETs

Published:2021-09-10 Issue: Volume:15 Page:1394-1399
ISSN:1998-4464
Container-title:International Journal of Circuits, Systems and Signal Processing
language:en
Short-container-title:

Author:

Smaani Billel¹,Labiod Samir²,Nafa Fares³,Benlatreche Mohamed Salah⁴,Latreche Saida²

Affiliation:

1. ngénierie des Systémes Electriques Department, Faculty of Technology, Boumerdes University, Algeria

2. Laboratoire Hyperfréquences et Semiconducteurs, Electronique Department, Constantine 1 University, Algeria

3. Boumerdes university, Faculté de Technologie, Laboratoire d’Ingénierie des Sytémes et des Telecommunication, Boumerdes, Algeria

4. Centre Universitaire Abdel Hafid Boussouf Mila, Algeria

Abstract

In this paper, we propose an analytical drain-current model for long-channel junctionless (JL) cylindrical surrounding-gate MOSFET (SRG MOSFET). It is based on surface-potential solutions obtained from Poisson’s equation using some approximations and separate conditions. Furthermore, analytical compact expressions of the drain-current have been derived for deep depletion, partial depletion, and accumulation mode. The confrontation of the model with TCAD simulation results, performed with Silvaco Software, proves the validity and the accuracy of the developed model

Publisher

North Atlantic University Union (NAUN)

Subject

Electrical and Electronic Engineering,Signal Processing

Reference17 articles.

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