Influence of Oxygen Composition and Carbon Impurity on Electronic Reliability of HfO2 Thin Films
Author:
Publisher
Society of Computer Chemistry Japan
Subject
General Medicine
Link
https://www.jstage.jst.go.jp/article/jccj/12/1/12_2012-0018/_pdf
Reference25 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. [2] J. Robertson, J. Vac. Sci. Technol. B, 18, 1785 (2000).
3. Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal‐oxide‐semiconductor devices
4. [4] J. Robertson, Solid-State Elect., 49, 283 (2005).
5. [5] G. Ribes, J. Mitard, M. Denais, F. Monsieur, C. Parthasarathy, E. Vincent, G. Ghibaudo, IEEE Trans. Devices and Materials Reliability, 5, 5 (2005).
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