The impact of laser energy on the photoresponsive characteristics of CdO/Si visible light photodetector

Abstract

AbstractIn this article, cadmium oxide (CdO) was deposited using pulsed laser deposition approach on porous silicon (Si) wafer for visible light photodetector application, through which a series of devices were proposed as a function of the deposition energy. The microstructural as well as optical characteristics of the prepared film/s were demonstrated, respectively, using x-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and ultraviolet visible light spectroscopy (UV–Vis) analysis. In details, the UV–Vis analysis revealed the occurrence of optical band gaps within the range of 2.38–2.42eV, while an average nanoparticle diameter was found to be 45nmusing FE-SEM technique. This in turn demonstrated a sound relation with the photoresponsive behavior of the attained photodetectors. A photoresponsivity and specific detectivity of 1.9μAmW−1and1.21×109Jones were attained using 700mJlaser energy. In the meanwhile, the estimated response/recover time of the addressed laser energy was found to be 300sand 340s, respectively. The photo-responsive characteristics of the fabricated devices were found to be in positive linear correlation with the applied laser energy.