The effect of nanoscale steps on the self-catalyzed position-controlled InAs nanowire growth
Author:
Funder
The MOST of China
NSF of China
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6439/aa9c1e/pdf
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1. Technology/System Codesign and Benchmarking for Lateral and Vertical GAA Nanowire FETs at 5-nm Technology Node
2. A Comprehensive Benchmark and Optimization of 5-nm Lateral and Vertical GAA 6T-SRAMs
3. Recent progress in integration of III–V nanowire transistors on Si substrate by selective-area growth
4. Diameter-dependent growth rate of InAs nanowires
5. High-Performance InAs Nanowire MOSFETs
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1. Double‐layer resist method to improve descum result when removing negative photoresist;Micro & Nano Letters;2019-05
2. (Invited) The Scaling-Down and Performance Optimization of InAs Nanowire Field Effect Transistors;ECS Transactions;2018-07-20
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