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Real-timein situmonitoring of wet thermal oxidation for precise confinement in VCSELs

  • Published:2008-09-22 Issue:10 Volume:23 Page:105021
  • ISSN:0268-1242
  • Container-title:Semiconductor Science and Technology
  • language:
  • Short-container-title:Semicond. Sci. Technol.

Author:

Almuneau G,Bossuyt R,Collière P,Bouscayrol L,Condé M,Suarez I,Bardinal V,Fontaine C

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. AlGaAs Tunnel Junction (TJ)-VCSELs: A NEGF–Drift-Diffusion Approach;IEEE Photonics Journal;2024-04

2. Computational inspection of VCSEL oxidation exploiting a spectrally-shaped illuminator;Optica Imaging Congress 2024 (3D, AOMS, COSI, ISA, pcAOP);2024

3. Improved Optical Inspection of lateral III-V-Semiconductor Oxidation Afforded by a Spectrally-Shaped Illumination;2023 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC);2023-06-26

4. Spectrally-shaped illumination for improved optical inspection of lateral III-V-semiconductor oxidation;Optics Express;2023-04-05

5. Chemical imaging of oxide confinement layers in GaAs/AlxGa1−xAs VCSELs;Semiconductor Science and Technology;2022-06-08
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