Abstract
Abstract
The authors have studied the lateral oxidation of
Al
x
Ga
1
−
x
As
layers buried in vertical-cavity surface-emitting lasers using cross-sectional scanning transmission electron microscopy coupled with electron energy loss spectroscopy. Chemical maps and composition profiles of the oxidized AlO
x
layers have been produced. The sensitivity is such that trace compositions of a few % As and Ga can be detected in the AlO
x
with a spatial resolution of a few nanometers on the recorded chemical maps. To demonstrate the performance of the mapping technique, we compare results from an area in the vertical-cavity surface-emitting laser (VCSEL) which is pure
Al
x
Ga
1
−
x
As
to an oxidized area. These measurements are performed on a thin sample prepared by the focused ion beam technique within an actual VCSEL, which makes the mapping technique applicable for degradation investigations in devices at different stages of their lifetime. More generally, this measurement method is effective for detailed evaluation of AlO
x
layers and their fabrication process.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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1. 高功率1 550 nm氧化限制型VCSEL设计与仿真;ACTA PHOTONICA SINICA;2024