Drain current collapse in GaN metal semiconductor field-effect transistors due to surface band-bending effects
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB
2. Current/voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias
3. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
4. Trap effects studies in GaN MESFETs by pulsed measurements
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1. Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method;IEEE Transactions on Electron Devices;2022-09
2. Current collapse in high-Al channel AlGaN HFETs;Applied Physics Express;2019-06-05
3. Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation;Solid-State Electronics;2013-11
4. Surface-Assisted Luminescence: The PL Yellow Band and the EL of n-GaN Devices;Advances in Condensed Matter Physics;2013
5. Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate;IEEE Electron Device Letters;2012-03
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