Electron mobility in Si-doped AlGaAs alloy and GaAs-AlAs pseudo-alloy
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. Deep donor levels (DXcenters) in III‐V semiconductors
2. Discrete structure of theDXcenter in GaAs-AlAs superlattices
3. Evidence of silicon interdiffusion in selectively doped GaAs‐AlAs superlattices by Hall measurements
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. AlxGa1−xAs/GaAs heterostructures with abnormally high mobility of charge carriers;Materials Science in Semiconductor Processing;2015-10
2. Al x Ga1 − x As/GaAs(100) hetermostructures with anomalously high carrier mobility;Semiconductors;2015-08
3. Influence of the Al concentration on the electronic properties of coupled and uncoupled AlxGa1−xAs/AlAs/AlyGa1−yAs double quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2014-07
4. Temperature and electric field dependences of the mobility of electrons in vertical transport in GaAs/Ga1−y AlyAs barrier structures containing quantum wells;Open Physics;2008-01-01
5. Influence of N on the electronic properties of GaAsN alloy films and heterostructures;Journal of Applied Physics;2007-11-15
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