Electronic properties of gated -doped semiconductors
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. Complex free‐carrier profile synthesis by ’’atomic‐plane’’ doping of MBE GaAs
2. Chapter 1 Delta-Doping of Semiconductors: Electronic, Optical, and Structural Properties of Materials and Devices
3. Subband mobility of quasi‐two‐dimensional electrons in Si atomic layer doped GaAs
4. Low-temperature electron mobility in a δ-doped semiconductor
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1. Transport and optical properties of tin δ-doped GaAs structures;Semiconductors;1999-07
2. Classical magnetotransport in a parabolic quantum well with a strong intersubband scattering;Semiconductor Science and Technology;1999-01-01
3. Characterization of periodically -doped semiconductors by capacitance - voltage profiling;Semiconductor Science and Technology;1997-11-01
4. Ionized impurity scattering in periodically δ-doped InP;Physical Review B;1997-05-15
5. Single and periodically Si -doped InP grown by LP-MOVPE;Semiconductor Science and Technology;1997-04-01
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