Single and periodically Si -doped InP grown by LP-MOVPE-Reference-Cited by-同舟云学术

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Single and periodically Si -doped InP grown by LP-MOVPE

Published:1997-04-01 Issue:4 Volume:12 Page:481-484
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Yavich B,Souza P L,Pamplona-Pires M,Henriques A B,Gonçalves L C D

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Complex free‐carrier profile synthesis by ’’atomic‐plane’’ doping of MBE GaAs

2. Fundamental studies and device application of ?-doping in GaAs Layers and in AlxGa1?xAs/GaAs heterostructures

3. AlInAs/InP Delta-Doped Channel Field Effect Transistor Grown by Organometallic Chemical Vapor Deposition

4. 0.32 μm gate length InP-channel MODFETS with ft above 90 GHz

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interfacial layers and impurity segregation in InP/In0.53Ga0.47As superlattices;Brazilian Journal of Physics;2002-06

2. nipi delta-doping superlattices for amplitude modulation;Brazilian Journal of Physics;2002-06

3. Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy;Journal of Applied Physics;2001-08

4. Deep levels in GaAs due to Si δ doping;Journal of Applied Physics;2000-12

5. Si δ-doping superlattices in InP grown by low-pressure metalorganic vapor phase epitaxy;Radiation Effects and Defects in Solids;1998-10

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