Deep levels in GaAs due to Si δ doping
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1323523
Reference47 articles.
1. Photoluminescence spectra from δ-doped barrier layers in modulation-doped InAlAs/InGaAs field-effect transistor structures
2. The persistent photoconductivity effect in modulation Si δ-doped pseudomorphic In0.2Ga0.8As/GaAs quantum well structure
3. Investigation of delta-doped quantum wells for power FET applications
4. Delta‐doped ohmic contacts ton‐GaAs
5. Submicron and low‐temperature ohmic contacts on δ‐doped GaAs
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1. Analysis of dislocation-related and point-defects in III-As layers by extensive DLTS study;Nanoscale and Quantum Materials: From Synthesis and Laser Processing to Applications 2022;2022-03-04
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3. Noise spectroscopy on defects with thermally activated capture in GaAs;Materials Science in Semiconductor Processing;2006-02
4. Dynamical behaviour of theδ-doped Au/GaAs Schottky barrier;physica status solidi (a);2003-01
5. Deep levels in strongly Si-compensated GaAs and AlGaAs;Journal of Applied Physics;2002-04-15
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