Wavelength-dispersive x-ray microanalysis as a novel method for studying magnesium doping in gallium nitride epitaxial films-Reference-Cited by-同舟云学术

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Wavelength-dispersive x-ray microanalysis as a novel method for studying magnesium doping in gallium nitride epitaxial films

Published:2006-07-26 Issue:9 Volume:21 Page:1287-1295
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Deatcher C J,Bejtka K,Martin R W,Romani S,Kheyrandish H,Smith L M,Rushworth S A,Liu C,Cheong M G,Watson I M

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. The doping process and dopant characteristics of GaN

2. Growth and applications of Group III-nitrides

3. Hole conductivity and compensation in epitaxial GaN:Mg layers

4. Electron energy-loss spectroscopy characterization of pyramidal defects in metalorganic vapor-phase epitaxy Mg-doped GaN thin films

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantification of Trace-Level Silicon Doping in AlxGa1–xN Films Using Wavelength-Dispersive X-Ray Microanalysis;Microscopy and Microanalysis;2021-07-05

2. Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive x-ray spectroscopy;Semiconductor Science and Technology;2017-02-13

3. Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N;Applied Physics Letters;2015-08-17

4. Native seeding and silicon doping in bulk growth of AlN single crystals by PVT method;physica status solidi (c);2014-02

5. Metal organic vapour phase epitaxy of AlN, GaN, InN and their alloys: A key chemical technology for advanced device applications;Coordination Chemistry Reviews;2013-07

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