A valved cracking phosphorus beam source using InP thermal decomposition and its application to MBE growth-Reference-Cited by-同舟云学术

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A valved cracking phosphorus beam source using InP thermal decomposition and its application to MBE growth

Published:2009-04-17 Issue:5 Volume:24 Page:055014
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Putyato Mikhail A,Preobrazhenskii Valerii V,Semyagin Boris R,Fëklin Dima F,Pakhanov Nikolai A,Emelianov Eugene A,Chikichev Sergei I

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Evaluation of the performance and operating characteristics of a solid phosphorus source valved cracking cell for molecular beam epitaxy growth of III–V compounds

2. Molecular-beam epitaxial growth of GaxIn1−xP–GaAs (x∼0.5) double heterojunction laser diodes using solid phosphorus and arsenic valved cracking cells

3. Operational aspects of a gallium phosphide source of P2 vapor in molecular beam epitaxy

4. A GaP decomposition source for producing a dimer phosphorus molecular beam free of gallium and tetramer phosphorus

5. InP decomposition phosphorus beam source for MBE: design, properties and superlattice growth

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1. Structural Properties and Energy Spectrum of Novel GaSb/AlP Self-Assembled Quantum Dots;Nanomaterials;2023-02-28

2. Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration;Nanomaterials;2022-12-14

3. Effect of the Crystallographic Orientation of GaSb Films on Their Structural Properties during MBE Heteroepitaxy on Vicinal Si(001) Substrates;Semiconductors;2020-12

4. Impact of LT-GaAs layers on crystalline properties of the epitaxial GaAs films grown by MBE on Si substrates;Journal of Physics: Conference Series;2016-08

5. InGaAs/GaAs Quantum Wells Grown by MBE on Artificial GaAs/Si(001) Substrates;Russian Physics Journal;2014-07

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