Modelling of transconductance-to-current ratio (gm/ID) analysis on double-gate SOI MOSFETs
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference38 articles.
1. Subthreshold slope of thin-film SOI MOSFET's
2. Metastable charge-trapping effect in SOI nMOSTs at 4.2 K
3. The dc characteristics of a silicon-on-insulator metal-semiconductor field effect transistor
4. Phonon-limited electron mobility in ultrathin silicon-on-insulator inversion layers
5. Reliable tantalum-gate fully-depleted-SOI MOSFET technology featuring low-temperature processing
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