Investigations on MgO-dielectric GaN/AlGaN/GaN MOS-HEMTs by using an ultrasonic spray pyrolysis deposition technique-Reference-Cited by-同舟云学术

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Investigations on MgO-dielectric GaN/AlGaN/GaN MOS-HEMTs by using an ultrasonic spray pyrolysis deposition technique

Published:2016-03-29 Issue:5 Volume:31 Page:055012
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Lee Ching-Sung,Hsu Wei-Chou,Liu Han-Yin,Wu Ting-Ting,Sun Wen-Ching,Wei Sung-Yen,Yu Sheng-Min

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/31/i=5/a=055012/pdf

Reference29 articles.

1. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

2. Investigations of HfO2∕AlGaN∕GaN metal-oxide-semiconductor high electron mobility transistors

3. Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using Zr$\hbox{O}_{\bm 2}$ or Hf $\hbox{O}_{\bm 2}$

4. 0.2-$\mu{\rm m}$ AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition ${\rm Al}_{2}{\rm O}_{3}$ Passivation

5. Investigation of Temperature-Dependent Characteristics of AlGaN/GaN MOS-HEMT by Using Hydrogen Peroxide Oxidation Technique

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering;Materials Science in Semiconductor Processing;2023-02

2. Reactive evaporation of SiOx films for passivation of GaN high-electron-mobility transistors;Journal of Physics and Chemistry of Solids;2019-06

3. Improved Ultraviolet Detection and Device Performance of Al2O3-Dielectric In0.17Al0.83N/AlN/GaN MOS-HFETs;IEEE Journal of the Electron Devices Society;2019

4. Comparative Study on Graded-Barrier AlxGa1−xN/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistor by Using Ultrasonic Spray Pyrolysis Deposition Technique;Semiconductor Science and Technology;2018-04-26

5. Evaluation of AlGaN/GaN metal–oxide–semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications;Japanese Journal of Applied Physics;2017-08-24

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