Design optimization of a single-sided Si/SiGe heterostructure mixed tunnelling avalanche transit time double drift region
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Invited paper Avalanche diode oscillators III. Design and analysis : the future
2. High efficiency GaInAs/InP heterojunction IMPATT diodes
3. MITATT mode in DDR heterostructure Impatt
4. Computer-aided studies on the microwave characteristics of InP/GaInAs and GaAs/GaInAs heterostructure single-drift-region impact avalanche transit time diodes
5. Heterojunction IMPATT diodes
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1. Studies on anisotype Si/Si1-xGexheterojunction DDR IMPATTs: efficient millimeter-wave sources at 94 GHz window;IETE Journal of Research;2013
2. Influence of small variation in impact ionization rate data on simulation of 4H-SiC IMPATT;16th International Workshop on Physics of Semiconductor Devices;2012-10-15
3. A New mm-Wave GaAs~Ga0.52In0.48P Heterojunction IMPATT Diode;IETE Journal of Research;2011
4. Comparative study on the high-bandgap material (GaN and SiC)-based impact avalanche transit time device;IET Microwaves, Antennas & Propagation;2008-12-01
5. A Monte Carlo study of Si/SiGe MITATT diodes for terahertz power generation;Solid-State Electronics;2008-05
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