Improved laser performance due to spatial separation of heavy- and light-hole states in compressive- and tensile-strained structures
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/9/i=9/a=001/pdf
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1. Comparison of the band alignment of strained and strain-compensated GaInNAs QWs on GaAs and InP substrates;Physica E: Low-dimensional Systems and Nanostructures;2006-03
2. Design optimization of InGaAsP–InGaAlAs 1.55 µm strain-compensated MQW lasers for direct modulation applications;Semiconductor Science and Technology;2004-02-19
3. Dependence of parallel hole mass on quantum well width, barrier parameters and wave function localization;Superlattices and Microstructures;1997-09
4. Strain-induced suppression of spin splitting in asymmetric p-type quantum wells;Surface Science;1996-07
5. Generalization of thek⋅papproach for strained layered semiconductor structures grown on high-index-planes;Physical Review B;1996-02-15
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