High-resolution dry etching of zinc telluride: characterization of etched surfaces by X-ray photoelectron spectroscopy, photoluminescence and Raman scattering-Reference-Cited by-同舟云学术

High-resolution dry etching of zinc telluride: characterization of etched surfaces by X-ray photoelectron spectroscopy, photoluminescence and Raman scattering

Published:1991-09-01 Issue:9A Volume:6 Page:A115-A122
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Foad M A,Watt M,Smart A P,Torres C M Sotomayro,Wilkinson C D W,Kuhn W,Wagner H P,Bauer S,Leiderer H,Gebhardt W

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/6/i=9A/a=021/pdf

Reference24 articles.

1. Etching and cathodoluminescence studies of ZnSe

2. Reactive ion beam etching of ZnSe and ZnS epitaxial films using Cl2electron cyclotron resonance plasma

3. Reactive ion etching of II-VI semiconductors using a mixture of methane and hydrogen

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