Gallium nitride surface protection during RTA annealing with a GaOxNycap-layer-Reference-Cited by-同舟云学术

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Gallium nitride surface protection during RTA annealing with a GaOxNycap-layer

Published:2016-03-11 Issue:4 Volume:31 Page:045008
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Khalfaoui Wahid,Oheix T,Cayrel F,Benoit R,Yvon A,Collard E,Alquier D

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/31/i=4/a=045008/pdf

Reference16 articles.

1. Ion implantation doping of OMCVD grown GaN

2. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

3. Microwave annealing of Mg-implanted andin situBe-doped GaN

4. Novel activation process for Mg-implanted GaN

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1. Optimisation of Negative Fixed Charge Based Edge Termination for Vertical GaN Schottky Devices;Micromachines;2024-05-29

2. Dependence of reverse leakage on the edge termination process in vertical GaN power device;Semiconductor Science and Technology;2022-12-12

3. Impact of Protective Layer Structures on High‐Temperature Annealing of GaN;physica status solidi (a);2022-11-17

4. Capping stability of Mg-implanted GaN layers grown on silicon;physica status solidi (a);2016-11-08

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