A Si tunnel field-effect transistor model with a high switching current ratio and steep sub-threshold swing-Reference-Cited by-同舟云学术

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A Si tunnel field-effect transistor model with a high switching current ratio and steep sub-threshold swing

Published:2014-08-05 Issue:9 Volume:29 Page:095016
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Wang X D,Xiong Y,Tang M H,Peng L,Xiao Y G,Xu X Y,Liang S E,Zhong X H,He J H

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/29/i=9/a=095016/pdf

Reference23 articles.

1. Complementary tunneling transistor for low power application

2. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

3. Tunnel field-effect transistors as energy-efficient electronic switches

4. Assessment of the Holland model for silicon phonon-phonon relaxation times using lattice dynamics calculations

5. Design of Tunneling Field-Effect Transistors Based on Staggered Heterojunctions for Ultralow-Power Applications

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4. TCAD Simulation Study of ESD Behavior of InGaAs/InP Heterojunction Tunnel FETs;Crystals;2020-11-21

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