Analysis of stress-induced mobility enhancement on (100)-oriented single- and double-gate n-MOSFETs using silicon-thickness-dependent deformation potential-Reference-Cited by-同舟云学术

Analysis of stress-induced mobility enhancement on (100)-oriented single- and double-gate n-MOSFETs using silicon-thickness-dependent deformation potential

Published:2015-03-23 Issue:4 Volume:30 Page:045009
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Choi Sujin,Sun Wookyung,Shin Hyungsoon

Funder

National Research Foundation of Korea

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/30/i=4/a=045009/pdf

Reference31 articles.

1. Introduction

2. Mobility-enhancement technologies

3. Mobility enhancement

4. The end of CMOS scaling

5. Mobility Enhancement Technology for Scaling of CMOS Devices: Overview and Status

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