Photoluminescence and Raman analysis of strain and composition in InGaAs/AlGaAs pseudomorphic heterostructures-Reference-Cited by-同舟云学术

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Photoluminescence and Raman analysis of strain and composition in InGaAs/AlGaAs pseudomorphic heterostructures

Published:1992-04-01 Issue:4 Volume:7 Page:562-566
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Gilperez J M,Gonzalez-Sanz F,Calleja E,Munoz E,Calleja J M,Mestres N,Castagne J,Barbier E

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/7/i=4/a=021/pdf

Reference19 articles.

1. Relaxation of strain within multilayer InGaAs/GaAs pseudomorphic structures

2. Raman Scattering from InGaAs/GaAs strained-layer superlattices

3. On the band gap of InGaAs/GaAs strained quantum wells

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Swift heavy ion irradiated InGaAs/InP multi quantum wells: Band-structure, interface and surface modifications;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-02

2. Modeling of Strain Induced by Compositional Variation in Wafer-Shaped Bulk Mixed Crystals;Japanese Journal of Applied Physics;2004-08-10

3. High-quality InAs grown on GaAs substrate with an in situ micro-structured buffer;Journal of Crystal Growth;2004-07

4. Modeling and Analytical Calculation of Strain Induced by Gradual Variation of Composition in Bulk InxGa1-xAs Mixed Crystal;Japanese Journal of Applied Physics;2004-03-10

5. Multiple-wavelength emission from In/sub x/Ga/sub 1-x/As-GaAs quantum wells grown on a nanoscale faceted GaAs substrate by molecular beam epitaxy;IEEE Journal of Selected Topics in Quantum Electronics;2002-09

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