The .Si identical to Si3defect at various (111)Si/SiO2and (111)Si/Si3N4interfaces
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/4/i=12/a=005/pdf
Reference72 articles.
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3. Effect of processing on the structure of the Si/SiO2interface
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5. Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high‐resolution XPS
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