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Measurements of radioactive contaminants in semiconductor materials

  • Published:2016-11-10 Issue:12 Volume:31 Page:123003
  • ISSN:0268-1242
  • Container-title:Semiconductor Science and Technology
  • language:
  • Short-container-title:Semicond. Sci. Technol.

Author:

Gordon Michael S,Rodbell Kenneth P,Murray Conal E,McNally Brendan D

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Single event burnout failures caused in silicon carbide power devices by alpha particles emitted from radionuclides;e-Prime - Advances in Electrical Engineering, Electronics and Energy;2023-09

2. Low temperature interconnects in 1st level packaging and its challenges;2022 International Conference on Electronics Packaging (ICEP);2022-05-11

3. Direct method for the quantitative analysis of surface contamination on ultra-low background materials from exposure to dust;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2021-04

4. A novel method for measuring ultra-trace levels of U and Th in Au, Pt, Ir, and W matrices using ICP-QQQ-MS employing an O2 reaction gas;Journal of Analytical Atomic Spectrometry;2020

5. A review of soft errors and the low α-solder bumping process in 3-D packaging technology;Journal of Materials Science;2017-07-28
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