Magnetic resonance studies of group IV and VI donors in Ga1-xAlxAs
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/6/i=10B/a=021/pdf
Reference38 articles.
1. Deep donor levels (DXcenters) in III‐V semiconductors
2. DX Deep Centers in AlxGa1-xAs Grown by Liquid-Phase Epitaxy
3. A new model of deep donor centres in AlxGa1-xAs
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electronic Structure and Hyperfine Structure of Deep Donors in Si and in Some Compound Semiconductors;Solid State Phenomena;1999-10
2. Manifestation of effective-mass states of secondary minima in the persistent photoconductivity related to the DX centre in;Semiconductor Science and Technology;1996-01-01
3. Electron Spin Resonance Studies of Te Doped AlGaAs Epilayers;Acta Physica Polonica A;1992-11
4. Coexistence of two deep donor states,DX−andDX0, of the Sn donor inGa1−xAlxAs;Physical Review B;1992-05-15
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