Observation of threshold voltage instabilities in AlGaN/GaN MIS HEMTs-Reference-Cited by-同舟云学术

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Observation of threshold voltage instabilities in AlGaN/GaN MIS HEMTs

Published:2014-05-29 Issue:7 Volume:29 Page:075019
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Zhang Kai,Wu Mei,Lei Xiaoyi,Chen Weiwei,Zheng Xuefeng,Ma Xiaohua,Hao Yue

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/29/i=7/a=075019/pdf

Reference19 articles.

1. Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition

2. Trapping effects in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor investigated by temperature dependent conductance measurements

3. Trap characterization ofin-situmetal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures by frequency dependent conductance technique

4. Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors

5. Effects of dye adsorption on the electron transport properties in ZnO-nanowire dye-sensitized solar cells

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Understanding the trap-induced frequency dispersion in the C–V curve of AlGaN/GaN hetero-structure;Semiconductor Science and Technology;2024-04-18

2. A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT with PZT and PZT/Al2O3 Gate Stacks;Micromachines;2024-01-05

3. Current Understanding of Bias-Temperature Instabilities in GaN MIS Transistors for Power Switching Applications;Crystals;2020-12-18

4. Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs*;Chinese Physics B;2020-04-01

5. Low-Frequency Noise Characterization of AlGaN/GaN HEMTs and MIS-HEMTs under UV Illumination;IEEE Transactions on Nanotechnology;2020

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