A study of low energy phosphorus implantation and annealing in Si:C epitaxial films-Reference-Cited by-同舟云学术

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A study of low energy phosphorus implantation and annealing in Si:C epitaxial films

Published:2007-01-09 Issue:2 Volume:22 Page:171-174
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Ye Zhiyuan,Kim Yihwan,Zojaji Ali,Sanchez Errol,Cho Yonah,Castle Matthew,Foad Majeed A

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of phosphorus doped Si:C films formed by in situ doped Si epitaxy and implantation process for n-type metal-oxide-semiconductor devices;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-03

2. Micro-Raman Characterization of Cluster Carbon Implanted Si before and after Rapid Thermal Annealing;ECS Transactions;2016-08-18

3. Revisiting the role of strain in solid-phase epitaxial regrowth of ion-implanted silicon;Applied Physics Express;2015-01-28

4. On the doping limit for strain stability retention in phosphorus doped Si:C;Journal of Applied Physics;2014-07-21

5. Formation of Si:CP layer through in-situ doping and implantation process for n-type metal–oxide–semiconductor devices;Thin Solid Films;2014-04

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