Ballistic transport at room temperature in deeply etched cross-junctions-Reference-Cited by-同舟云学术

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Ballistic transport at room temperature in deeply etched cross-junctions

Published:2000-03-01 Issue:3 Volume:15 Page:272-276
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Hieke Katharina,Wesström Jan-Olof,Forsberg Erik,Carlström Carl-Fredrik

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Overview of nanoelectronic devices

2. Analysis of an electron‐wave Y‐branch switch

3. A mesoscopic ballistic electron mixer with efficient frequency conversion at radio frequency

4. Four-Terminal Phase-Coherent Conductance

5. Demonstration of quantized conductance in deeply reactive ion etched In0.53Ga0.47As/InP electron waveguides with in-plane gates

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1. Non-equilibrium dynamics, materials and structures for hot carrier solar cells: a detailed review;Semiconductor Science and Technology;2020-06-17

2. Nanostructuring of conduction channels in (In,Ga)As-InP heterostructures: Overcoming carrier generation caused by Ar ion milling;Applied Physics Letters;2018-04-09

3. Room-Temperature Ballistic Transport in III-Nitride Heterostructures;Nano Letters;2015-01-28

4. Effects of a High-k Dielectric on the Performance of III–V Ballistic Deflection Transistors;IEEE Electron Device Letters;2012-08

5. Exploring Digital Logic Design Using Ballistic Deflection Transistors Through Monte Carlo Simulations;IEEE Transactions on Nanotechnology;2011-11

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