Charge carrier lifetime degradation in Cz silicon through the formation of a boron-rich layer during BBr3diffusion processes-Reference-Cited by-同舟云学术

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Charge carrier lifetime degradation in Cz silicon through the formation of a boron-rich layer during BBr3diffusion processes

Published:2010-04-06 Issue:5 Volume:25 Page:055001
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Kessler Michael Andreas,Ohrdes Tobias,Wolpensinger Bettina,Harder Nils-Peter

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Interface Reactions of B[sub 2]O[sub 3]-Si System and Boron Diffusion into Silicon

2. The influence of diffusion-induced dislocations on high efficiency silicon solar cells

3. Generation and Distribution of Dislocations by Solute Diffusion

4. Distribution of Residual Stresses in Boron Doped p+ Silicon Films

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