Phonons at non-planar (III-V) semiconductor heterojunctions: I. GaAs/AlAs(001)
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/5/i=8/a=003/pdf
Reference21 articles.
1. Calculation of phonon dispersion in superlattices using the matching procedure
2. Bulk and surface phonons in fcc-fcc superlattices using the matching procedure
3. Phonons at interfaces: I. A microscopic approach
4. The in-plane dispersion of interface phonon modes in GaSb/InAs semiconductor heterojunctions
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Capillary phenomena and macroscopic dynamics of complex two-dimensional defects in crystals;Progress in Surface Science;1997-05
2. The effect of interface bond type on the structural and optical properties of GaSb/InAs superlattices;Semiconductor Science and Technology;1993-01-01
3. Resonant Raman scattering in GaAs/AlAs quantum wells;Semiconductor Science and Technology;1992-03-01
4. Phonons in superlattices: II. A microscopic approach;Semiconductor Science and Technology;1991-05-01
5. Phonons at non-planar (III-V) semiconductor heterojunctions. II. GaSb/InAs (001);Semiconductor Science and Technology;1991-03-01
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