Hall and photocapacitance analyses of the Sb-related electron trap in GaAs1-xSbx(x⩽0.02) layers grown by liquid phase epitaxy
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Ab-initio study on the phase transition, elastic, optoelectronic, and thermodynamic properties of GaAs1-xSbx;Optik;2020-10
2. Control of the composition and the structural properties of GaAsSb layers, grown by liquid phase epitaxy, by Bi addition to the growth melt;Journal of Crystal Growth;2020-09
3. As-Ga-Sb (Arsenic-Gallium-Antimony);Non-Ferrous Metal Systems. Part 1;2006
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