Multiphononon resonant Raman scattering in He+-implanted InGaN-Reference-Cited by-同舟云学术

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Multiphononon resonant Raman scattering in He+-implanted InGaN

Published:2014-02-26 Issue:4 Volume:29 Page:045013
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Domènech-Amador N,Cuscó R,García-Hernansanz R,González-Díaz G,Gandhi J,Bensaoula A,Artús L

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/29/i=4/a=045013/pdf

Reference25 articles.

1. When group-III nitrides go infrared: New properties and perspectives

2. Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion

3. Study of ion‐implantation damage in GaAs:Be and InP:Be using Raman scattering

4. Characterization of implantation and annealing of Zn‐implanted InP by Raman spectrometry

5. Raman-scattering criteria for characterization of anneal-restored zinc blende single crystals: Application to Si+-implanted InP

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Redshift ofA1(longitudinal optical) mode for GaN crystals under strong electric field;Applied Physics Express;2017-12-19

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