Properties of GaAsN layers grown from melt containing Li3N as flux for enhancing nitrogen dissolution
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference37 articles.
1. III N V semiconductors for solar photovoltaic applications
2. Comparison of GaInNAs Laser Diodes Based on Two to Five Quantum Wells
3. Characteristics of InGaAsN/GaAsN quantum well lasers emitting in the 1.4-μm regime
4. Lasing properties of strain-compensated InAs/InGaAsN/GaAsN heterostructures in 1.3–1.55 μm spectral range
5. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Varying nitrogen background pressure; an efficient approach to improve electrical properties of MBE-grown GaAs1−xNx thin films with less atomic disorder;Journal of Alloys and Compounds;2017-02
2. Optical density of states in ultradilute GaAsN alloy: Coexistence of free excitons and impurity band of localized and delocalized states;Journal of Applied Physics;2014-07-14
3. Nitrogen incorporation into GaAsN and InGaAsN layers grown by liquid-phase epitaxy;physica status solidi (c);2013-03-18
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