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High current (1300 A) optical triggering of a 12 kV 4H-SiC thyristor

  • Published:2013-03-12 Issue:4 Volume:28 Page:045016
  • ISSN:0268-1242
  • Container-title:Semiconductor Science and Technology
  • language:
  • Short-container-title:Semicond. Sci. Technol.

Author:

Rumyantsev S L,Levinshtein M E,Shur M S,Cheng L,Agarwal A K,Palmour J W

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023-08

2. Electrical Properties of Optically Triggered SiC JFET for Power Electronic Application;2021 IEEE 12th International Symposium on Power Electronics for Distributed Generation Systems (PEDG);2021-06-28

3. 4H-SiC double-layer thin n-base light triggered thyristor with a trenched-junction isolated amplifying gate;Superlattices and Microstructures;2018-10

4. Interface annealing characterization of Ti/Al/Au ohmic contacts to p-type 4H-SiC;Journal of Semiconductors;2015-12

5. Optical triggering of 4H-SiC thyristors (18 kV class) to high currents in purely inductive load circuit;Semiconductor Science and Technology;2014-08-20
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