4H-SiC double-layer thin n-base light triggered thyristor with a trenched-junction isolated amplifying gate-Reference-Cited by-同舟云学术

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4H-SiC double-layer thin n-base light triggered thyristor with a trenched-junction isolated amplifying gate

Published:2018-10 Issue: Volume:122 Page:1-8
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Wang Xi,Pu Hongbin,Liu Qing,An Liqi

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. Failure modes of 15-kV SiC SGTO thyristors during repetitive extreme pulsed overcurrent conditions;Schrock;IEEE Trans. Power Electron.,2016

2. Turn-ON of high-voltage SiC thyristors for fast-switching applications;O'Brien;IEEE J. Emerg. Sel. Top. Power Electron.,2016

3. Theoretical and experimental study of 22 kV SiC emitter turn-OFF (ETO) Thyristor;Song;IEEE Trans. Power Electron.,2017

4. 15-kV single-bias all-optical ETO thyristor;Mojab,2014

5. Optical switch-on of silicon carbide thyristor;Levinshtein;Electron. Lett.,2002

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hole-transmission enhancement in 4H-silicon carbide light triggered thyristor for low loss *;Semiconductor Science and Technology;2020-02-01

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