Thermal oxidation of GaSb and study of oxide properties
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/6/i=2/a=013/pdf
Reference5 articles.
1. Chemical composition and formation of thermal and anodic oxide/III–V compound semiconductor interfaces
2. Analysis of native oxide films and oxide-substrate reactions on III–V semiconductors using thermochemical phase diagrams
3. Chemical Depth Profile of Thermal Oxide on GaSb Using XPS Method
4. The effect of interface arsenic domains on the electrical properties of GaAs MOS structures
5. On the electrical properties of compound semiconductor interfaces in metal/insulator/ semiconductor structures and the possible origin of interface states
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. In-situ monitoring and analysis of GaSb(100) substrate deoxidation;Applied Surface Science;2005-04
2. Thermal oxidation of gallium antimonide — surface studies of the substrate and the oxide film;Applied Surface Science;1992-02
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