Simulation of impact ionization breakdown in MESFETS using Monte Carlo methods
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Impact ionization and light emission in GaAs metal‐semiconductor field effect transistors
2. Correlation between impact ionisation, recombination and visible light emission in GaAs MESFETs
3. Light emission and burnout characteristics of GaAs power MESFET's
4. Improvement of the drain breakdown voltage of GaAs power MESFET's by a simple recess structure
5. 4-GHz 15-W power GaAs MESFET
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Monte Carlo simulation of THz frequency range Gunn effect in InP MOSFET at impact ionization conditions;AIP Conference Proceedings;2013
2. Current instability in power HEMTs;Semiconductor Science and Technology;2001-05-24
3. Gunn instabilities in power HEMTs;Electronics Letters;2001
4. Monte Carlo simulation of high-field transport and impact ionization in AlGaAs p+in+diodes;Semiconductor Science and Technology;1999-11-01
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