Improvement of the drain breakdown voltage of GaAs power MESFET's by a simple recess structure-Reference-Cited by-同舟云学术

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Improvement of the drain breakdown voltage of GaAs power MESFET's by a simple recess structure

Published:1978-06 Issue:6 Volume:25 Page:563-567
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Furutsuka T.,Tsuji T.,Hasegawa F.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31777/01479531.pdf?arnumber=1479531

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3. Control of GaAs-MESFET breakdown voltage by Shannon implantation;physica status solidi (a);2007-03

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