Properties of InGaAsN heterostructures emitting at 1.3–1.55 µm-Reference-Cited by-同舟云学术

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Properties of InGaAsN heterostructures emitting at 1.3–1.55 µm

Published:2005-08-05 Issue:9 Volume:20 Page:961-965
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Kryzhanovskaya N V,Egorov A Yu,Mamutin V V,Polyakov N K,Tsatsulnìkov A F,Musikhin Yu G,Kovsh A R,Ledentsov N N,Ustinov V M,Bimberg D

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. GaInNAs long-wavelength lasers: progress and challenges

2. 1.29 [micro sign]m GaInNAs multiple quantum-well ridge-waveguide laser diodes with improved performance

3. GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes

4. Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source

5. GaInAsN/GaAs laser diodes operating at 1.52 [micro sign]m

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1. Parallel Planar-Processed and Ion-Induced Electrically Isolated Future Generation AlGaN/GaN HEMT for Gas Sensing and Opto-Telecommunication Applications;IOP Conference Series: Materials Science and Engineering;2013-12-16

2. Heteroepitaxy and selective area heteroepitaxy for silicon photonics;Current Opinion in Solid State and Materials Science;2012-04

3. Structure and composition profile of InAs/GaAs quantum dots capped by an InGaAs and InAlAs combination layer;Nanotechnology;2010-06-02

4. Molecular beam epitaxy growth methods of wavelength control for InAs/(In)GaAsN/GaAs heterostructures;Nanotechnology;2008-10-02

5. High‐brightness long‐wavelength semiconductor disk lasers;Laser & Photonics Review;2008-07-07

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