An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Effect of polysilicon depletion charge on electron mobility in ultrathin oxide MOSFETs
2. Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide Metal-Oxide-Semiconductor Field-Effect-Transistors with Direct Tunneling Current
3. Scattering of electrons in silicon inversion layers by remote surface roughness
4. Monte Carlo study of remote Coulomb and remote surface roughness scattering in nanoscale Ge PMOSFETs with ultrathin high-κ dielectrics
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4. Hole mobility and remote scattering in strained InGaSb quantum well MOSFET channels with Al2 O3 oxide;physica status solidi (RRL) - Rapid Research Letters;2013-06-25
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