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Hole mobility and remote scattering in strained InGaSb quantum well MOSFET channels with Al2 O3 oxide

  • Published:2013-06-25 Issue:8 Volume:7 Page:550-553
  • ISSN:1862-6254
  • Container-title:physica status solidi (RRL) - Rapid Research Letters
  • language:en
  • Short-container-title:Phys. Status Solidi RRL

Author:

Kumar Madisetti Shailesh,Chidambaram Thenappan,Nagaiah Padmaja,Tokranov Vadim,Yakimov Michael,Oktyabrsky Serge

Funder

SRC through MSD Focus Center

NSF

Intel Corporation

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference21 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. G. Dewey B. Chu-Kung R. Kotlyar M. Metz N. Mukherjee M. Radosavljevic IEEE Symp. VLSI Technology (2012), p. 45.

3. J. J. Gu X. W. Wang H. Wu J. Shao A. T. Neal M. J. Manfra R. G. Gordon P. D. Ye IEDM Tech. Digest 27.6.1 (2012).

4. S. Oktyabrsky in: Fundamentals of III-V semiconductor MOSFETs, edited by S. Oktyabrsky and P. Ye (Springer, New York, 2010), p. 349.

5. Theory of hole mobility in strained Ge and III-V p-channel inversion layers with high-κ insulators

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High hole mobility in strained In0.25Ga0.75Sb quantum well with high quality Al0.95Ga0.05Sb buffer layer;Applied Physics Letters;2018-08-27

2. Strained InGaSb/AlGa(As)Sb Quantum Wells for p-Channel Transistors;Journal of Electronic Materials;2016-03-11

3. Growth of strained InGaSb quantum wells for p-FET on Si: Defects, interfaces, and electrical properties;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-09

4. Development of III-Sb Technology for p-Channel MOSFETs;International Journal of High Speed Electronics and Systems;2014-09

5. (Invited) P-Type III-Sb MOSFET on a Metamorphic Substrate: Towards All III-V CMOS;ECS Transactions;2014-03-26
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