Focussed ion beam induced damage in silicon studied by scanning capacitance microscopy-Reference-Cited by-同舟云学术

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Focussed ion beam induced damage in silicon studied by scanning capacitance microscopy

Published:2003-02-10 Issue:4 Volume:18 Page:195-198
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Brezna W,Wanzenb ck H,Lugstein A,Bertagnolli E,Gornik E,Smoliner J

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Use of focused-ion-beam and modeling to optimize submicron MOSFET characteristics

2. The focused ion beam as an integrated circuit restructuring tool

3. Cross-sectional sample preparation by focused ion beam: A review of ion-sample interaction

4. Low-damage specimen preparation technique for transmission electron microscopy using iodine gas-assisted focused ion beam milling

5. Fabrication of silicon aperture probes for scanning near-field optical microscopy by focused ion beam nano machining

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy;Journal of Applied Physics;2018-03-28

2. A scanning probe mounted on a field-effect transistor: Characterization of ion damage in Si;Micron;2017-10

3. Enabling electromechanical transduction in silicon nanowire mechanical resonators fabricated by focused ion beam implantation;Nanotechnology;2014-03-04

4. Evaluating focused ion beam induced damage in soft materials;Micron;2013-07

5. Focused ion beam induced local modifications of the contact potential difference of n- and p-doped silicon;Journal of Physics D: Applied Physics;2009-07-02

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