Determining the thickness and composition of SiGe heterostructures using an optical microscope-Reference-Cited by-同舟云学术

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Determining the thickness and composition of SiGe heterostructures using an optical microscope

Published:2003-03-13 Issue:4 Volume:18 Page:390-392
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Ferguson R S,Fobelets K,Ahmad M M,Norris D J,Zhang J

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Ion beam mixing: Basic experiments

2. Packing of linear molecules: An electron microscope study of disorder in mesophases and binary solids

3. One- and two-dimensional carrier profiling in semiconductors by nanospreading resistance profiling

4. Kelvin probe force microscopy of beveled semiconductors

5. Bevelling technique for low surface roughness based on CMP

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Colour coding Ge concentrations in Si1 xGexby bevelling and oxidation: CABOOM;Semiconductor Science and Technology;2004-02-02

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