Defects in high purity GaAs grown by low pressure metalorganic chemical vapour deposition-Reference-Cited by-同舟云学术

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Defects in high purity GaAs grown by low pressure metalorganic chemical vapour deposition

Published:1991-03-01 Issue:3 Volume:6 Page:229-230
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Feng S L,Bourgoin J C,Razeghi M

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/6/i=3/a=016/pdf

Reference10 articles.

1. High‐purity GaAs layers grown by low‐pressure metalorganic chemical vapor deposition

2. Native defects in gallium arsenide

3. Transient capacitance spectroscopy in heavily compensated semiconductors

4. AsH3to Ga(CH3)3Mole Ratio Dependence of Dominant Deep Levels in MOCVD GaAs

5. The trend of deep states in organometallic vapor‐phase epitaxial GaAs with varying As/Ga ratios

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1. Pump-probe surface photovoltage spectroscopy measurements on semiconductor epitaxial layers;Review of Scientific Instruments;2014-04

2. Laser Assisted Surface Photovoltage Spectroscopy: A New Tool for an Accurate Determination of the Bandgap of Semiconductor Epitaxial Layers;Physics of Semiconductor Devices;2014

3. Molecular beam epitaxy of complex oxides;Molecular Beam Epitaxy;2013

4. Study of defects in proton irradiated GaAs/AlGaAs solar cells;Applied Surface Science;2009-07

5. Defects in Gallium Arsenide;Defects in Microelectronic Materials and Devices;2008-11-19

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