The dependence of UMOSFET characteristics and reliability on geometry and processing-Reference-Cited by-同舟云学术

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The dependence of UMOSFET characteristics and reliability on geometry and processing

Published:2001-04-12 Issue:6 Volume:16 Page:447-454
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Suliman S A,Gollagunta N,Trabzon L,Hao J,Ridley R S,Knoedler C M,Dolny G M,Awadelkarim O O,Fonash S J

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Power DMOS for high-frequency and switching applications

2. Thermal stability and secondary breakdown in planar power MOSFET's

3. A new vertical power MOSFET structure with extremely reduced on-resistance

4. Trends in power semiconductor devices

5. Modeling of the on-resistance of LDMOS, VDMOS, and VMOS power transistors

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of U-shaped diamond trenches with vertical {111} sidewalls by anisotropic etching of diamond (110) surfaces;Diamond and Related Materials;2020-03

2. Impact of Trench Dimensions on the Device Performance of GaN Vertical Trench MOSFETs;IEEE Electron Device Letters;2017-11

3. High-Temperature Reverse-Bias Stressing of Thin Gate Oxides in Power Transistors;ECS Transactions;2014-08-09

4. High temperature bias-stress-induced instability in power trench-gated MOSFETs;Microelectronics Reliability;2014-02

5. A model for avalanche breakdown calculation in low-voltage trench power MOSFET devices;Semiconductor Science and Technology;2012-11-30

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