Porosity-induced modification of the phonon spectrum of n-GaAs-Reference-Cited by-同舟云学术

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Porosity-induced modification of the phonon spectrum of n-GaAs

Published:1997-04-01 Issue:4 Volume:12 Page:491-493
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Tiginyanu I M,Irmer G,Monecke J,Vogt A,Hartnagel H L

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

2. Visible photoluminescence from porous silicon: A quantum confinement effect mainly due to holes?

3. Fabrication of Vertical and Uniform-Size Porous InP Structure by Electrochemical Anodization

4. Anisotropic Refractive Index of Porous InP Fabricated by Anodization of (111)A Surface

5. Time resolved blue and ultraviolet photoluminescence in porous GaP

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