Anisotropy of the electron Landégfactor in quantum wells-Reference-Cited by-同舟云学术

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Anisotropy of the electron Landégfactor in quantum wells

Published:1997-04-01 Issue:4 Volume:12 Page:380-383
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Jeune P Le,Robart D,Marie X,Amand T,Brousseau M,Barrau J,Kalevich V,Rodichev D

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Magnetic resonance of 2D electrons in a single quantum well of InP/GaInAs

2. Electron-spin resonance in the two-dimensional electron gas of GaAs-AlxGa1−xAs heterostructures

3. Magneticgfactor of electrons in GaAs/AlxGa1−xAs quantum wells

4. Quantum beats of electron Larmor precession in GaAs wells

5. Resonant Raman scattering due to bound-carrier spin flip in GaAs/AlxGa1−xAs quantum wells

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