Tuning two-dimensional electron gas of ferroelectric/GaN heterostructures by ferroelectric polarization

Author:

Zhang Jihua,Yang Chuanren,Wu Song,Liu Ying,Zhang Ming,Chen Hongwei,Zhang Wanli,Li Yanrong

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

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3. Ferroelectric composite artificially-structured functional material: multifield control for tunable functional devices;Journal of Physics D: Applied Physics;2022-04-04

4. Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors;2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD);2020-09

5. Hetero-integration of quasi two-dimensional PbZr0.2Ti0.8O3 on AlGaN/GaN HEMT and non-volatile modulation of two-dimensional electron gas;Applied Physics Letters;2019-11-04

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